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Difference between pin and avalanche photo diode guide ^493^

Difference between pin and avalanche photo diode guide ^493^

Avalanche photodiode An avalanche photodiode ( APD ) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication .

 

 

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Difference between pin photodiode and avalanche photodiode This article gives information about the difference between a PIN diode and APD to know more details about it. PIN diode : PIN photodiode does not have a high-intensity electric field region. Characteristics and use of Si APD (Avalanche Photodiode) APDs (Avalanche Photodiodes) are high-speed, high sensitiv-ity photodiodes utilizing an internal gain mechanism that func-tions by applying a reverse voltage. Compared to PIN photo-diodes, APDs can measure even lower level light and are used Selection guide - March 2019 Si APD (avalanche photodiode) High-speed, high sensitivity photodiodes having an internal gain mechanism. light than the PIN photodiode, it does require special care and handling such as the need for higher reverse voltage and more detailed What is difference between phototransistor and photodiode? What is the difference between photodiode and photocell? (transistor's emitter more negative than collector pin). Photo diode can be operated in forward or reverse bias but also with a resistor in series and put the resistor and What is the difference between a solar cell and a photodiode, in operation and as well as in construction? Many diodes designed for use specifically as a photodiode use a PIN junction rather Avalanche photodiode A User Guide An APD differs from a PIN photodiode by providing internal photo-electronic signal gain. Avalanche photodiodes are commercially available that span the wavelength range from 300nm to 1700nm. Silicon APDs can be used between 300nm to 1100nm, germanium Performance comparisons between PIN and APD photodetectors for use in optical communication systems

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